Double Reference Layer STT-MRAM Structures with Improved Performance. (August 2022)

• Record Type: Journal Article
• Authors: Loch, Wilton Jaciel; Fiorentini, Simone; Jørstad, Nils Petter; Goes, Wolfgang; Selberherr, Siegfried; Sverdlov, Viktor
• Is Part Of: Solid-state electronics. Volume 194(2022)
• Publication Date: 2022-08
• Subjects: MRAM -- Finite element method -- Spin-transfer torque -- Magnetic tunnel junction -- Magnetic switching; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2022.108335
• Languages: English
• ISSNs: 0038-1101

Abstract

Highlights: Correct simulation of the Double Spin-Torque Magnetic Tunnel Junction structure. Reduction of 2 times achieved for the required switching voltage and time. Both free layer interfaces contribute to the damping-like torque. Spacer conductivity close to the literature assumed value generates largest torque. Abstract: MRAM structures employing two ferromagnetic layers with fixed magnetization were recently introduced in experimental works, allowing the reduction of both switching currents and cell sizes. We verify by means of simulation their improved switching characteristics over structures with a single fixed magnetization layer.