Experimental study of thermal coupling effects in FD-SOI MOSFET. (August 2022)

• Record Type: Journal Article
• Authors: Vanbrabant, Martin; Raskin, Jean-Pierre; Flandre, Denis; Kilchytska, Valeriya
• Is Part Of: Solid-state electronics. Volume 194(2022)
• Publication Date: 2022-08
• Subjects: FD-SOI -- UTBB -- Thermal-coupling -- Self-heating; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2022.108362
• Languages: English
• ISSNs: 0038-1101

Abstract

Highlights: Thermal cross-coupling between side-by-side FD-SOI nFETs. Heat originated from a neighbor device operation degrades device characteristics. Comparison with hot chuck measurements used to estimate the temperature rise. Abstract: This work studies the thermal cross-coupling between two side-by-side FD-SOI MOSFETs separated by two different spacings. Through DC measurements, the temperature increase experienced by a device due to the self-heating of a neighbor one is estimated by making a comparison with hot chuck measurements. The degradation of electrical parameters caused by the operation (i.e. heating) of the neighbor device is also analyzed as a function of the bias applied to (i.e. power dissipated by) the neighbor device.