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HARVARD Citation
Feng, Z. et al. (2019). A 800 V β‐Ga2O3 Metal–Oxide–Semiconductor Field‐Effect Transistor with High‐Power Figure of Merit of Over 86.3 MW cm−2. Physica status solidi. 216 (20), p. n/a. [Online].
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Feng, Z. et al. (2019). A 800 V β‐Ga2O3 Metal–Oxide–Semiconductor Field‐Effect Transistor with High‐Power Figure of Merit of Over 86.3 MW cm−2. Physica status solidi. 216 (20), p. n/a. [Online].