Vulnerability evaluation on 16 nm FinFET Ultrascale+ MPSoC using fault injection and proton irradiation. (June 2022)

• Record Type: Journal Article
• Authors: Li, Yonghong; Yang, Weitao; Wang, Maocheng; Li, Yang; Guo, Yaxin; Li, Pei; Zhao, Haoyu; He, Chaohui; Wang, Di; Yang, Ye; Zhang, Xiaodong; An, Heng
• Is Part Of: Microelectronics and reliability. Volume 133(2022)
• Publication Date: 2022-06
• Subjects: Ultrascale+ MPSoC -- Vulnerability -- Dynamic partial reconfiguration -- Fault injection -- Proton irradiation; Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2022.114534
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: The SEE vulnerability in two ways bitstream loading implementations on a dynamic partial reconfiguration (DPR) design is examined using fault injections and proton irradiations on a Xilinx 16 nm FinFET Ultrascale+ MPSoC. During fault injection, two kinds of soft errors are detected, they are system halt (SH) and calculation result error (CRE). In comparison, the detected errors are only SHs in the 100 and 80 MeV proton irradiations. Also, the critical bit error and cross sections are calculated in the fault injection and proton irradiation, respectively. The results signify that there is almost no difference in SEE vulnerability between the two ways of bitstream loading in DPR design. Highlights: Fault injection and proton irradiations are performed on a DPR design. 100 and 80 MeV Proton irradiation verified the fault injection results. Soft errors are compared and analyzed in different tests further.