Cite
MLA Citation
Qing Zhang et al.. “Tunable Multi‐Bit Nonvolatile Memory Based on Ferroelectric Field‐Effect Transistors.” Advanced Electronic Materials, vol. 8, 2022, p. n/a. http://access.bl.uk/ark:/81055/vdc_100155142787.0x000004
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Qing Zhang et al.. “Tunable Multi‐Bit Nonvolatile Memory Based on Ferroelectric Field‐Effect Transistors.” Advanced Electronic Materials, vol. 8, 2022, p. n/a. http://access.bl.uk/ark:/81055/vdc_100155142787.0x000004