Cite
HARVARD Citation
Zhang, Q. et al. (2022). Tunable Multi‐Bit Nonvolatile Memory Based on Ferroelectric Field‐Effect Transistors. Advanced Electronic Materials. p. n/a. [Online].
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Zhang, Q. et al. (2022). Tunable Multi‐Bit Nonvolatile Memory Based on Ferroelectric Field‐Effect Transistors. Advanced Electronic Materials. p. n/a. [Online].