On electrical analysis of Al-rich p-AlGaN films for III-nitride UV light emitters. (26th November 2021)

• Record Type: Journal Article
• Authors: Jadhav, Aakash; Bagheri, Pegah; Klump, Andrew; Khachariya, Dolar; Mita, Seiji; Reddy, Pramod; Rathkanthiwar, Shashwat; Kirste, Ronny; Collazo, Ramon; Sitar, Zlatko; Sarkar, Biplab
• Is Part Of: Semiconductor science and technology. Volume 37:Number 1(2022)
• Publication Date: 2021-11-26
• Subjects: III-nitride -- Mg-doped AlGaN -- ionization energy -- mobility -- contact resistance; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1361-6641/ac3710
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: In this work, an alternative scheme to estimate the resistivity and ionization energy of Al-rich p-AlGaN epitaxial films is developed using two large-area ohmic contacts. Accordingly, the resistivities measured using current–voltage measurements were observed to corroborate the Hall measurements in the Van der Pauw configuration. A free hole concentration of ∼1.5 × 10 17 cm −3 and low ionization energy of ∼65 meV in Mg-doped Al0.7 Ga0.3 N films is demonstrated. Nearly an order of magnitude lower hydrogen concentration than Mg in the as-grown AlGaN films is thought to reduce the Mg passivation and enable higher hole concentrations in Al-rich p-AlGaN films, compared to p-GaN films. The alternate methodology proposed in this work is expected to provide a simpler pathway to evaluate the electrical characteristics of Al-rich p-AlGaN films for future III-nitride ultraviolet light emitters.