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APA Citation
Nam, J. H., Oh, S., Jang, H. Y., Kwon, O., Park, H., Park, W., Kwon, J., Kim, Y., & Cho, B. (2021). low Power MoS2/Nb2O5 Memtransistor Device with Highly Reliable Heterosynaptic Plasticity (Adv. Funct. Mater. 40/2021). Advanced functional materials, 31, n/a. http://access.bl.uk/ark:/81055/vdc_100144239764.0x000019