Cite
HARVARD Citation
Nam, J. et al. (2021). Low Power MoS2/Nb2O5 Memtransistor Device with Highly Reliable Heterosynaptic Plasticity (Adv. Funct. Mater. 40/2021). Advanced functional materials. p. n/a. [Online].
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Nam, J. et al. (2021). Low Power MoS2/Nb2O5 Memtransistor Device with Highly Reliable Heterosynaptic Plasticity (Adv. Funct. Mater. 40/2021). Advanced functional materials. p. n/a. [Online].