Correction: Epitaxial growth of β-Ga2O3 (−201) thin film on four-fold symmetry CeO2 (001) substrate for heterogeneous integrations. Issue 48 (2nd December 2021)

• Record Type: Journal Article
• Authors: Tang, Xiao; Li, Kuang-Hui; Liao, Che-Hao; Zheng, Dongxing; Liu, Chen; Lin, Rongyu; Xiao, Na; Krishna, Shibin; Tauboada, Jose; Li, Xiaohang
• Is Part Of: Journal of materials chemistry. Volume 9:Issue 48(2021)
• Page Start: 17542
• Page End: 17542
• Publication Date: 2021-12-02
• Subjects: Materials -- Periodicals; Chemistry, Analytic -- Periodicals; Optical materials -- Research -- Periodicals; Electronics -- Materials -- Research -- Periodicals; 543.0284
• DOI: 10.1039/d1tc90261j
• Languages: English
• ISSNs: 2050-7526

Abstract

Abstract : Correction for 'Epitaxial growth of β-Ga2 O3 (−201) thin film on four-fold symmetry CeO2 (001) substrate for heterogeneous integrations' by Xiao Tang et al., J. Mater. Chem. C, 2021, 9, 15868–15876, DOI: ; 10.1039/D1TC02852A .