Cite
HARVARD Citation
Tang, X. et al. (2021). Correction: Epitaxial growth of β-Ga2O3 (−201) thin film on four-fold symmetry CeO2 (001) substrate for heterogeneous integrations. Journal of materials chemistry. 9 (48), p. 17542. [Online].
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Tang, X. et al. (2021). Correction: Epitaxial growth of β-Ga2O3 (−201) thin film on four-fold symmetry CeO2 (001) substrate for heterogeneous integrations. Journal of materials chemistry. 9 (48), p. 17542. [Online].