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Ismail, M., Abbas, H., Mahata, C., Choi, C., & Kim, S. (2022). optimizing the thickness of Ta2O5 interfacial barrier layer to limit the oxidization of Ta ohmic interface and ZrO2 switching layer for multilevel data storage. Journal of materials science & technology, 106, 98–107. http://access.bl.uk/ark:/81055/vdc_100153013783.0x000033