Cite
HARVARD Citation
Liao, W. et al. (2021). Improving the Electrical and Low‐Frequency Noise Performance of Ionic‐Liquid‐Gated ReS2 Field‐Effect Transistor with Hexagonal Boron Nitride. Physica status solidi. 15 (9), p. n/a. [Online].
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Liao, W. et al. (2021). Improving the Electrical and Low‐Frequency Noise Performance of Ionic‐Liquid‐Gated ReS2 Field‐Effect Transistor with Hexagonal Boron Nitride. Physica status solidi. 15 (9), p. n/a. [Online].