Improving the Electrical and Low‐Frequency Noise Performance of Ionic‐Liquid‐Gated ReS2 Field‐Effect Transistor with Hexagonal Boron Nitride. Issue 9 (16th July 2021)

• Record Type: Journal Article
• Authors: Liao, Wugang; Huang, Long
• Is Part Of: Physica status solidi. Volume 15:Issue 9(2021)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2021-07-16
• Subjects: 2D materials -- h-BN -- low-frequency noise -- ReS2; Solid state physics -- Periodicals; 530.4105
• DOI: 10.1002/pssr.202100276
• Languages: English
• ISSNs: 1862-6254

Abstract

Abstract : The impact of the interfacial hexagonal boron nitride (h‐BN) layer between the channel and ionic liquid (IL) on an IL‐gated 2D rhenium disulfide (ReS2 ) field‐effect transistor (FET) is investigated. Through electrical DC and low‐frequency noise (LFN) characterization, it is found that the interfacial h‐BN layer enhances mobility and reduces the noise level of the device due to suppressed traps and improved channel interface. These experimental findings suggest that the use of interfacial h‐BN layer in 2D FETs is a promising method for enhancing the device performance. Abstract : An ionic‐liquid‐gated 2D rhenium disulfide (ReS2 ) field‐effect transistor (FET) is fabricated with a thin hexagonal boron nitride (h‐BN) as the interfacial layer. The impact of the interfacial h‐BN layer on the ReS2 FET is investigated. Improved DC performance and electrical low‐frequency noise are obtained for the device with h‐BN owing to the suppressed traps and better channel interface.