Cite
HARVARD Citation
Dzhigaev, D. et al. (2022). Correction: Strain mapping inside an individual processed vertical nanowire transistor using scanning X-ray nanodiffraction. Nanoscale. 14 (13), p. 5247. [Online].
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Dzhigaev, D. et al. (2022). Correction: Strain mapping inside an individual processed vertical nanowire transistor using scanning X-ray nanodiffraction. Nanoscale. 14 (13), p. 5247. [Online].