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APA Citation
Oussalah, S., Filali, W., Garoudja, E., Zatout, B., Lekoui, F., Amrani, R., Sengouga, N., & Henini, M. (2022). analysis of I–V-T characteristics of Be-doped AlGaAs Schottky diodes grown on (100) GaAs substrates by molecular beam epitaxy. Microelectronics journal, 122, . http://access.bl.uk/ark:/81055/vdc_100152631407.0x000056