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HARVARD Citation
Oussalah, S. et al. (2022). Analysis of I–V-T characteristics of Be-doped AlGaAs Schottky diodes grown on (100) GaAs substrates by molecular beam epitaxy. Microelectronics journal. p. . [Online].
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Oussalah, S. et al. (2022). Analysis of I–V-T characteristics of Be-doped AlGaAs Schottky diodes grown on (100) GaAs substrates by molecular beam epitaxy. Microelectronics journal. p. . [Online].