Anatomy of resistive switching behavior in titanium oxide based RRAM device. (1st June 2022)

• Record Type: Journal Article
• Authors: Yang, Kuan; Fu, Liping; Chen, Junhao; Wang, Fangcong; Tian, Lixue; Song, Xiaoqiang; Wu, Zewei; Li, Yingtao
• Is Part Of: Materials science in semiconductor processing. Volume 143(2022)
• Publication Date: 2022-06-01
• Subjects: Resistive switching -- Numerical physics model -- Oxygen vacancy -- Metal oxide; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2022.106492
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: Resistive random access memory (RRAM) devices based on binary transition metal oxides and the application for nonvolatile memory devices are becoming an area of extensive concern. The physical understanding of resistive switching is crucial for RRAM development. In this paper, both experiments and simulated dynamic formation and rupture processes of oxygen vacancy (VO ) conductive filament (CF) channels in titanium oxide based RRAM devices are presented. Compared with the Al/TiO2.1 /Al device with higher oxygen content, the Al/TiO1.6 /Al device shows a lower forming voltage. However, little dependence on oxygen content in TiOx film is shown for other resistive switching parameters, including high resistance state resistance, low resistance state resistance, set voltage, and reset voltage. A numerical physics model is presented to relate the resistive switching behavior with the evolution CF channels in terms of VO morphology and I − V characteristics. Highlights: Effectively decrease forming voltage and operating energy of RRAM. Explicitly analyze the switching behavior by stochastic numerical physics model. Dynamically visualize evolution of conductive filaments to understand the mechanism.