Source pocket-engineered hetero-gate dielectric SOI Tunnel FET with improved performance. (1st June 2022)

• Record Type: Journal Article
• Authors: Sharma, Vanshaj; Kumar, Sanjay; Talukdar, Jagritee; Mummaneni, Kavicharan; Rawat, Gopal
• Is Part Of: Materials science in semiconductor processing. Volume 143(2022)
• Publication Date: 2022-06-01
• Subjects: Subthreshold swing -- Band-to-band tunnelling -- Ambipolar current -- TCAD simulation -- SiGe pocket; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2022.106541
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: In this paper, we have studied and proposed a planar Tunnel FET device with source side SiGe pocket and hetero-gate dielectric structure that works by utilizing quantum mechanical Band-to-Band tunnelling (BTBT) mechanism. Simulation results obtained using a calibrated SILVACO TCAD device simulator show that the device exhibits good ambipolar performance because of the hetero-gate dielectric and the use of source pocket leads to steep point subthreshold swing of 4.90 mV/dec., an average subthreshold swing of 25.31 mV/dec. and a threshold voltage of 0.23 V. For including the hetero-gate dielectric, the variation in drain current values with high- κ dielectric length is analysed. The change in transfer characteristics with pocket parameters including pocket length and pocket doping is also reported. A 4 nm Si0.7 Ge0.3 n + pocket with doping concentration of 5 × 10 19 cm −3 is found to show the maximum ON-OFF current ratio of 5.23 × 10 11 . This paper also performs a comparative study between different TFET structures and the analysis clearly highlights the potential of proposed Source Pocket-Engineered Hetero Gate Dielectric (SPE-HGD) TFET device for low-power and energy-efficient applications. Highlights: Analysis of various techniques to improve the performance of planar SOI-TFET. Use of Hetero-Gate Dielectric reduces the ambipolar current. A source pocket engineered Tunnel FET improves ON current and subthreshold swing. Optimized pocket parameters are required to get positive results.