Cite
HARVARD Citation
Liang, X. et al. (2021). Impact of heavy-ion irradiation on gate oxide reliability of silicon carbide power MOSFET. Radiation effects and defects in solids. 176 (11), pp. 1038-1048. [Online].
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Liang, X. et al. (2021). Impact of heavy-ion irradiation on gate oxide reliability of silicon carbide power MOSFET. Radiation effects and defects in solids. 176 (11), pp. 1038-1048. [Online].