Impact of heavy-ion irradiation on gate oxide reliability of silicon carbide power MOSFET. Issue 11 (2nd December 2021)

• Record Type: Journal Article
• Authors: Liang, Xiaowen; Zhao, Jinghao; Zheng, Qiwen; Cui, JiangWei; Yang, Sheng; Wang, Baoshun; Zhang, Dan; Yu, XueFeng; Guo, Qi
• Is Part Of: Radiation effects and defects in solids. Volume 176:Issue 11/12(2021)
• Page Start: 1038
• Page End: 1048
• Publication Date: 2021-12-02
• Subjects: SiC MOSFET -- heavy ion irradiation -- partial SEGR -- ramp voltage stress; Radiation chemistry -- Periodicals; Crystals -- Defects -- Periodicals; Crystal lattices -- Periodicals; 530.416
• DOI: 10.1080/10420150.2021.1999239
• Languages: English
• ISSNs: 1042-0150

Abstract

Abstract : SiC power MOSFETs were exposed to 79 Br, 64 Cu, and 47 Ti ions with different biases. After irradiation, the static parameters of the device did not change significantly. The oxide reliability is also not affected after ON-state irradiation. However, noticeable degradation of gate oxide reliability has been found after heavy-ion exposure with extremely low drain bias(50 V). The degradation is attributed to defects in the gate oxide. According to the analysis of the experimental results, the defects are caused by the high electric field induced by the partial SEGR effect during heavy-ion irradiation.