Cite
APA Citation
Chang, Y., Fowler, B., Zhou, F., & Lee, J. C. (2015). (Invited) Intrinsic Unipolar SiOx-Based Resistive Switching Memory: Characterization, Mechanism and Applications. ECS transactions, 69, 149–164. http://access.bl.uk/ark:/81055/vdc_100117133411.0x000015