Cite
HARVARD Citation
Chang, Y. et al. (2015). (Invited) Intrinsic Unipolar SiOx-Based Resistive Switching Memory: Characterization, Mechanism and Applications. ECS transactions. pp. 149-164. [Online].
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Chang, Y. et al. (2015). (Invited) Intrinsic Unipolar SiOx-Based Resistive Switching Memory: Characterization, Mechanism and Applications. ECS transactions. pp. 149-164. [Online].