Cite

APA Citation

    Khusro, A., Husain, S., Hashmi, M. S., & Ansari, A. Q. (2020). small signal behavioral modeling technique of GaN high electron mobility transistor using artificial neural network: An accurate, fast, and reliable approach. International journal of RF and microwave computer-aided engineering, 30(4), n/a. http://access.bl.uk/ark:/81055/vdc_100103088013.0x00003d
  
Back to record