Crystalline anisotropy of β-Ga2O3 thin films on a c-plane GaN template and a sapphire substrate. (19th January 2022)

• Record Type: Journal Article
• Authors: Ma, Xiaocui; Xu, Rui; Mei, Yang; Ying, Leiying; Zhang, Baoping; Long, Hao
• Is Part Of: Semiconductor science and technology. Volume 37:Number 3(2022)
• Publication Date: 2022-01-19
• Subjects: anisotropy -- β-Ga2O3 -- thin films -- XRD -- lattice mismatch; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1361-6641/ac3b3c
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: In this work, crystalline anisotropy of heteroepitaxial ( 2 ˉ 01 ) β -Ga2 O3 films on a c-plane sapphire substrate and a GaN template was investigated using x-ray diffraction. The ( 2 ˉ 01 ) ω -scan broadening of β -Ga2 O3 on GaN exhibited six-fold rotational symmetric anisotropy along different azimuths, with maxima along the [010] direction and minima along the [102] direction, respectively. However, in β -Ga2 O3 on sapphire, it was nearly isotropic. Smaller lattice mismatch between β -Ga2 O3 and GaN were taken into account to explain the discrepancy, which also explained the better quality of β -Ga2 O3 deposited on GaN. Our results present a new viewpoint of the crystallographic anisotropy of ( 2 ˉ 01 ) β -Ga2 O3 thin films.