Cite
MLA Citation
Hanlin Xie et al.. “AlN/GaN MISHEMTs on Si with in-situ SiN as a gate dielectric for power amplifiers in mobile SoCs.” Applied physics express, vol. 15, 2022, p. . http://access.bl.uk/ark:/81055/vdc_100148070880.0x000004
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Hanlin Xie et al.. “AlN/GaN MISHEMTs on Si with in-situ SiN as a gate dielectric for power amplifiers in mobile SoCs.” Applied physics express, vol. 15, 2022, p. . http://access.bl.uk/ark:/81055/vdc_100148070880.0x000004