Cite
HARVARD Citation
Xie, H. et al. (2022). AlN/GaN MISHEMTs on Si with in-situ SiN as a gate dielectric for power amplifiers in mobile SoCs. Applied physics express. p. . [Online].
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Xie, H. et al. (2022). AlN/GaN MISHEMTs on Si with in-situ SiN as a gate dielectric for power amplifiers in mobile SoCs. Applied physics express. p. . [Online].