A differential OTP memory based highly unique and reliable PUF at 180 nm technology node. (February 2022)

• Record Type: Journal Article
• Authors: Malviya, P.; Sadana, S.; Lele, A.; Priyadarshi, K.; Sharma, A.; Naik, A.; Bandhu, L.; Bende, A.; Tsundus, S.; Kumar, S.; Singh, V.P.; Chawla, A.; Chawla, P.; Singh, A.; Sehgal, D.; Kumar, A.; Uddin, W.; Chatterjee, S.; Suri, M.; Jatana, H.S.; Ganguly, U.
• Is Part Of: Solid-state electronics. Volume 188(2022)
• Publication Date: 2022-02
• Subjects: Cryptography -- Key generation -- PUF -- Random Number Generator -- Non-Volatile Memory -- Oxide breakdown -- TDDB; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2021.108207
• Languages: English
• ISSNs: 0038-1101

Abstract

Abstract: A random binary code-based unique chip identity is essential for the security of Internet-of-Things devices. Physically Unclonable Function (PUF) exploits intrinsic physical randomness in devices to generate an unbiased random binary code. Earlier, a PUF was demonstrated using a large area (10 µm × 10 µm) HfO 2 -based OTPM (One-Time Programmable Memory) where perfectly unbiased random bit generation was shown using differential breakdown operation. However, the use of conventional materials (e.g. PECVD Si O 2 ) and scalability across mature nodes (10 μm –0.18 μm ) are attractive for the IoT application of PUF. In this paper, we present a highly scalable PECVD SiO 2 breakdown based differential OTPM PUF implemented in a 180 nm CMOS foundry. The experimental results on approximately 1700 tested differential OTPM PUF show that the random string generated is unique. i.e. mean Inter-Hamming distance of 50%. The generated string has excellent reproducibility i.e. ideal Intra-Hamming distance of 0% and no bit flip, even at 250 °C for 6 h. Excellent scalability (from area 26 µm × 26 µm to 0.26 µm × 0.26 µm) is observed. The PUF passes a variety of NIST tests successfully.