Cite

    Ngo, T. H., Comyn, R., Chenot, S., Brault, J., Damilano, B., Vézian, S., Frayssinet, E., Cozette, F., Defrance, N., Lecourt, F., Labat, N., Maher, H., & Cordier, Y. (2022). combination of selective area sublimation of p-GaN and regrowth of AlGaN for the co-integration of enhancement mode and depletion mode high electron mobility transistors. Solid-state electronics, 188, . http://access.bl.uk/ark:/81055/vdc_100148216526.0x00004f