Tuning the responsible parameters for gain characteristics of the novel type-II D-QW (InGaAs) heterostructure. (15th March 2022)

• Record Type: Journal Article
• Authors: Riyaj, Md; Quraishi, A.M.; Hasan, P.M.Z.; Darwesh, Reem; Kattayat, Sandhya; Josey, Smitha; Kumar, Shalendra; Ezzeldien, Mohammed; Rathi, Amit; Alvi, P.A.
• Is Part Of: Materials science in semiconductor processing. Volume 140(2022)
• Publication Date: 2022-03-15
• Subjects: GaAsSb -- InGaAs -- Quantum well -- Heterostructure -- Optical gain; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2021.106377
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: The study made in this paper is directed towards the tuning of the parameters responsible for the shift in optical properties of a novel type-II D-QW (double quantum well) heterostructure having the QW of InGaAs and barrier of GaAsSb. This shift in optical properties has been observed via change in composition (change in mole fraction) of the constituent layers that form the heterostructure. The tunability of such parameters has been studied via computing the envelope functions, localized charge carriers, associated quantized energies and the matrix elements (i.e., optical and momentum matrix elements) which give information about the strength of the optical transitions responsible for optical gain of the quantum well heterostructure. For these computations, a multiband k. p model has been employed. Finally, the computed outcomes clarify that the proposed heterostructure is efficient to emit the radiations of 1.55 μm emission wavelength with high optical gain (6000/cm) and can be utilized in the O, E, and S bands of telecom window in optical communication.