A sandwich-structured AlGaN/GaN HEMT with broad transconductance and high breakdown voltage. Issue 39 (12th September 2019)

• Record Type: Journal Article
• Authors: Chen, Dingbo; Liu, Zhikun; Liang, Jinghan; Wan, Lijun; Xie, Zhuoliang; Li, Guoqiang
• Is Part Of: Journal of materials chemistry. Volume 7:Issue 39(2019)
• Page Start: 12075
• Page End: 12079
• Publication Date: 2019-09-12
• Subjects: Materials -- Periodicals; Chemistry, Analytic -- Periodicals; Optical materials -- Research -- Periodicals; Electronics -- Materials -- Research -- Periodicals; 543.0284
• DOI: 10.1039/c9tc03718g
• Languages: English
• ISSNs: 2050-7526

Abstract

Abstract : This paper reports a sandwich-structured AlGaN/GaN high electron mobility transistor (HEMT). Abstract : This paper reports a sandwich-structured AlGaN/GaN high electron mobility transistor (HEMT). The design includes a bottom gate, a top field plate and an AlN dielectric layer, which realized broad transconductance (gate voltage operating between −3 V to 3 V) and high off-state breakdown voltage (620 V @ V G = −10 V) simultaneously. The device shows great potential in the application of high-power electronics with good linear characteristics.