A sandwich-structured AlGaN/GaN HEMT with broad transconductance and high breakdown voltage. Issue 39 (12th September 2019) - Chen, Dingbo
Abstract : This paper reports a sandwich-structured AlGaN/GaN high electron mobility transistor (HEMT). Abstract : This paper reports a sandwich-structured AlGaN/GaN high electron mobility transistor (HEMT). The design includes a bottom gate, a top field plate and an AlN dielectric layer, which realized broad transconductance (gate voltage operating between −3 V to 3 V) and high off-state breakdown voltage (620 V @ V G = −10 V) simultaneously. The device shows great potential in the application of high-power electronics with good linear characteristics.