GaN-based blue laser diode with 6.0 W of output power under continuous-wave operation at room temperature. (November 2021)

• Record Type: Journal Article
• Authors: Liang, Feng; Zhao, Degang; Liu, Zongshun; Chen, Ping; Yang, Jing; Duan, Lihong; Shi, Yongsheng; Wang, Hai
• Is Part Of: Journal of semiconductors. Volume 42:Number 11(2021)
• Publication Date: 2021-11
• Subjects: GaN -- blue laser diode -- high power; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1674-4926/42/11/112801
• Languages: English
• ISSNs: 1674-4926

Abstract

Abstract: In this work, we reported the room-temperature continuous-wave operation of 6.0 W GaN-based blue laser diode (LD), and its stimulated emission wavelength is around 442 nm. The GaN-based high power blue LD is grown on a c -plane GaN substrate by metal organic chemical vapor deposition (MOCVD), and the width and length of the ridge waveguide structure are 30 and 1200 μ m, respectively. The threshold current is about 400 mA, and corresponding threshold current density is 1.1 kA/cm 2 .