Cite
APA Citation
Lee, Y. J., Han, J. S., Lee, D. E., Lee, T. H., Kim, J. Y., Suh, J. M., Lee, J. H., Im, I. H., Kim, S. J., Kwak, K. J., & Jang, H. W. (2022). high Hole Mobility Inorganic Halide Perovskite Field‐Effect Transistors with Enhanced Phase Stability and Interfacial Defect Tolerance. Advanced Electronic Materials, 8, n/a. http://access.bl.uk/ark:/81055/vdc_100148624154.0x00000b