Cite
HARVARD Citation
Lee, Y. et al. (2022). High Hole Mobility Inorganic Halide Perovskite Field‐Effect Transistors with Enhanced Phase Stability and Interfacial Defect Tolerance. Advanced Electronic Materials. p. n/a. [Online].
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Lee, Y. et al. (2022). High Hole Mobility Inorganic Halide Perovskite Field‐Effect Transistors with Enhanced Phase Stability and Interfacial Defect Tolerance. Advanced Electronic Materials. p. n/a. [Online].