Reliability analysis of cost-efficient CH3NH3PbI3 based dopingless tunnel FET. (10th December 2021)

• Record Type: Journal Article
• Authors: Sharma, Preeti; Madan, Jaya; Pandey, Rahul; Sharma, Rajnish
• Is Part Of: Semiconductor science and technology. Volume 37:Number 1(2022)
• Publication Date: 2021-12-10
• Subjects: deep defect -- dopingless -- interface trap charge -- shallow defect -- subthreshold swing -- tunnel FET; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1361-6641/ac38bb
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: Electrostatically-doped TFETs (ED-TFETs) are amongst the most widely used cost-efficient steeper devices due to the use of charge-plasma technique and tunneling mechanism. However, the reliability analysis of ED-TFETs is considered an important concern for the research community. Most studies have only focused on improving the performance of ED-TFETs such as dopingless (DL)-TFET in terms of on-current ( I ON ), subthreshold swing (SS) and threshold voltage ( V th ), rather than investigating the reliability issues. In this context, the aim of our work is to investigate the reliability analysis of our previously reported methyl-ammonium lead tri-iodide materials based DL-TFET (MAPbI3 -DL-TFET). The influence of interface trap charges, shallow and deep defects on the electrical and analog performance of MAPbI3 -DL-TFET has been analyzed using the Silvaco ATLAS tool at room temperature. Extensive results produced show that deep-level (Gaussian) defects impact the performance of the device prominently while the tail defects affect the device performance insignificantly. The present findings showed that the donor/acceptor trap charges impact the device in the subthreshold region considerably, while in the superthreshold region the impact of trap charges is marginal. In our view, these results emphasize the reliability analysis of MAPbI3 -DL-TFET for the very first time. We hope that our research will be useful and valuable for DL-TFET manufacturers.