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APA Citation
Mativenga, M., Geng, D., Um, J. G., Seok, M., Kang, D. H., Jang, J., Mruthyunjaya, R. K., Heiler, G. N., & Tredwell, T. J. (2013). p.22: Improving Switching Characteristics of Amorphous‐InGaZnO4 Thin‐Film Transistors by Dual‐Gate Driving. Digest of technical papers, 44(1), 1062–1065. http://access.bl.uk/ark:/81055/vdc_100052800745.0x000036