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HARVARD Citation
Karamimanesh, M. et al. (2021). A robust and write bit-line free sub-threshold 12T-SRAM for ultra low power applications in 14 nm FinFET technology. Microelectronics journal. p. . [Online].
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Karamimanesh, M. et al. (2021). A robust and write bit-line free sub-threshold 12T-SRAM for ultra low power applications in 14 nm FinFET technology. Microelectronics journal. p. . [Online].