Advanced electrical characterization of AlN/Si based heterogeneous junction for photonic applications. (February 2022)
- Record Type:
- Journal Article
- Title:
- Advanced electrical characterization of AlN/Si based heterogeneous junction for photonic applications. (February 2022)
- Main Title:
- Advanced electrical characterization of AlN/Si based heterogeneous junction for photonic applications
- Authors:
- Hassan, S.
Ahmed, S.
Ali, M.
Fahad, S. - Abstract:
- Abstract: AlN/Si based heterogeneous junction is investigated, herein, for photonic applications. A hyperfine layer of AlN onto the n-type Silicon substrate is fabricated, and a detailed analysis of subject stack has been carried out by variety of techniques such as Scanning Electron Microscope (SEM), Current-Voltage (I–V), Capacitance-Voltage (C–V), Charge Deep Level Transient Spectroscopy (Q-DLTS), Transient of Photo-voltages (TPV) and Kinetics of Dark and Luminous Currents. The occurrence of Si3 N4 layer at the interface of AlN and Si has been witnessed and extensively studied by the electrical diagnostic approaches to identify a crucial role of the charges, which may directly affect the properties and operation of whole AlN/Si stack. The optical measurements have also been performed and evidence of Si3 N4 layer formation at the AlN and Silicon interface, which plays pivotal role to the overall AlN/Si stack. Furthermore, the defect levels and their respective qualitative as well as quantitative analysis near the valence and conduction band edges of AlN is also reported. The given stack has been investigated by multi-bias and switched voltage (positive/negative) routines at different active areas of subject AlN device matrix for their potential usage in Deep ultra-violet (DUV) and other photonic application.
- Is Part Of:
- Materials science in semiconductor processing. Volume 138(2022)
- Journal:
- Materials science in semiconductor processing
- Issue:
- Volume 138(2022)
- Issue Display:
- Volume 138, Issue 2022 (2022)
- Year:
- 2022
- Volume:
- 138
- Issue:
- 2022
- Issue Sort Value:
- 2022-0138-2022-0000
- Page Start:
- Page End:
- Publication Date:
- 2022-02
- Subjects:
- AlN Hetero junction -- I–V Characterization -- Q-DLTS -- Transient of photo-voltage (TPV) -- Energy band picture -- Interface defects
Semiconductors -- Periodicals
Integrated circuits -- Materials -- Periodicals
Semiconducteurs -- Périodiques
Circuits intégrés -- Matériaux -- Périodiques
Electronic journals
621.38152 - Journal URLs:
- http://www.sciencedirect.com/science/journal/latest/13698001 ↗
http://www.elsevier.com/journals ↗ - DOI:
- 10.1016/j.mssp.2021.106292 ↗
- Languages:
- English
- ISSNs:
- 1369-8001
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 5396.440600
British Library DSC - BLDSS-3PM
British Library HMNTS - ELD Digital store - Ingest File:
- 20006.xml