Degradation mechanisms of 1.3 μm C-doped quantum dot lasers grown on native substrate. (November 2021)

• Record Type: Journal Article
• Authors: Zenari, M.; Buffolo, M.; De Santi, C.; Norman, J.; Herrick, R.W.; Meneghesso, G.; Zanoni, E.; Bowers, J.; Meneghini, M.
• Is Part Of: Microelectronics and reliability. Volume 126(2021)
• Publication Date: 2021-11
• Subjects: Degradation -- InAs quantum dots -- Laser diodes -- Doping -- Silicon photonics; Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2021.114222
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: The aim of this paper is to analyse the degradation modes of 1.3 μm InAs quantum dot laser diodes (QD LDs) grown by using carbon as a p-type dopant, as an alternative to beryllium. The devices were stressed at high current densities, to favor the onset of excited-state (ES) emission, and to study the related degradation phenomena. The study of QD LDs is of fundamental importance for the photonic integrated circuits (PICs). The investigation is based on two types of stress tests: 1) a current step stress and 2) a constant current stress. With these experiments we demonstrate that a) the current is a determining factor for the onset of the ES during the operation of such devices. b) the onset of ES is responsible for a rapid quenching of the ground state (GS) emission. c) stress induces a significant increase in the threshold current of the devices, that is ascribed to the lowering of the injection efficiency, which in turn can be explained by the easier escape of carriers from quantum dots (QDs) from ES energy levels. d) the contribution of defects on the optical and electrical degradation is also discussed.