Analysis of radiation-induced transient errors on 7 nm FinFET technology. (November 2021)

• Record Type: Journal Article
• Authors: Azimi, S.; De Sio, C.; Sterpone, L.
• Is Part Of: Microelectronics and reliability. Volume 126(2021)
• Publication Date: 2021-11
• Subjects: Radiation effects -- FinFET technology -- Single Event Transient -- Soft errors; Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2021.114319
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: FinFET technology has recently gained attention in the semiconductor industry due to many benefits it offers, such as lower power consumption, faster performance, and lower static leakage current. However, the behavior of this technology for mission-critical applications where radiation effects are the main concern is not very well known. This work is dedicated to the detailed characterization of radiation-induced transient errors in 7 nm FinFET technology, calculating the sensitivity of basic logic gates implemented using ASAP7 PDK library and predicting the distribution of heavy ions induced Single Event Transient (SET) pulses.