Vertical GaN devices: Process and reliability. (November 2021)

• Record Type: Journal Article
• Authors: You, Shuzhen; Geens, Karen; Borga, Matteo; Liang, Hu; Hahn, Herwig; Fahle, Dirk; Heuken, Michael; Mukherjee, Kalparupa; De Santi, Carlo; Meneghini, Matteo; Zanoni, Enrico; Berg, Martin; Ramvall, Peter; Kumar, Ashutosh; Björk, Mikael T.; Ohlsson, B. Jonas; Decoutere, Stefaan
• Is Part Of: Microelectronics and reliability. Volume 126(2021)
• Publication Date: 2021-11
• Subjects: Vertical GaN device -- Power electronics -- 200 mm CMOS compatible -- GaN-on-polyAlN; Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2021.114218
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: This paper reviews recent progress and key challenges in process and reliability for high-performance vertical GaN transistors and diodes, focusing on the 200 mm CMOS-compatible technology. We particularly demonstrated the potential of using 200 mm diameter CTE matched substrates for vertical power transistors, and gate module optimizations for device robustness. An alternative technology path based on coalescence epitaxy of GaN-on-Silicon is also introduced, which could enable thick drift layers of very low dislocation density.