Fast cut-off, low I2T and high temperature monolithic on-chip fuse on silicon substrate for new fail-safe embedded power switch. (November 2021)

• Record Type: Journal Article
• Authors: Oumaziz, Amirouche; Sarraute, Emmanuel; Richardeau, Frédéric; Bourennane, Abdelhakim; Combettes, Céline; Bley, Vincent; Ghannam, Ayad
• Is Part Of: Microelectronics and reliability. Volume 126(2021)
• Publication Date: 2021-11
• Subjects: On-chip fuse -- Power converters -- Fuse design -- 3D finite elements method; Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2021.114240
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: In this paper, a first concept of monolithic semiconductor fuses on silicon substrate, is realized and experimentally characterized. These new compact devices are, able to perform fast and irreversible current cut-off at medium voltage (200 V), relatively high current (10A), with very low pre-arcing time (~4 μs to 5 μs). The fuses are intended for fail-safe power converter capabilities applications. Design and 3D simulation by finite elements method, taking into account static and dynamic specifications have been carried out. Thermal management in steady state is improved by dielectric epoxy thermal insulation under each constriction of the fuse. Implementation and practical tests are reported.