Carbon ion implantation as healing strategy for improved reliability in phase-change memory arrays. (November 2021)

• Record Type: Journal Article
• Authors: Bourgeois, G.; Meli, V.; Al Mamun, F.; Mazen, F.; Nolot, E.; Martinez, E.; Barnes, J.-P.; Bernier, N.; Jannaud, A.; Laulagnet, F.; Hemard, B.; Castellani, N.; Bernard, M.; Sabbione, C.; Milesi, F.; Magis, T.; Socquet-Clerc, C.; Coig, M.; Garrione, J.; Cyrille, M.-C.; Charpin, C.; Navarro, G.; Andrieu, F.
• Is Part Of: Microelectronics and reliability. Volume 126(2021)
• Publication Date: 2021-11
• Subjects: Phase-change memory (PCM) -- Reliability -- Ion implantation -- 4 kb arrays; Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2021.114221
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: In this paper we investigate the effect of Carbon ion implantation in Ge2 Sb2 Te5 based Phase-Change Memory (PCM) targeting reliability improvement in 4 kb memory arrays. We show how ion implantation by beam line allows to localize the Carbon in a specific volume of the active layer, demonstrating that a low C concentration (lower than 5 at. %) can be achieved with a high control thanks to dose monitoring. We evidence an outstanding improvement of the PCM cell performances, in both single devices and 4 kb arrays, such as programming window widening and reduced variability of electrical parameters. We support our findings by TEM/EDS analyses demonstrating the healing effects of C ion implantation on interfaces and on retarding the phase-change layer segregation mechanisms.