Cite
MLA Citation
Shin-Ichiro Hayashi and Keiji Wada. “Accelerated aging for gate oxide of SiC MOSFETs under continuous switching conditions by applying advanced HTGB test.” Microelectronics and reliability, vol. 126, 2021, p. . http://access.bl.uk/ark:/81055/vdc_100146760779.0x000056