Cite
HARVARD Citation
Hayashi, S. et al. (2021). Accelerated aging for gate oxide of SiC MOSFETs under continuous switching conditions by applying advanced HTGB test. Microelectronics and reliability. p. . [Online].
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Hayashi, S. et al. (2021). Accelerated aging for gate oxide of SiC MOSFETs under continuous switching conditions by applying advanced HTGB test. Microelectronics and reliability. p. . [Online].