On the stochastic nature of conductive points formation and their effects on reliability of MoS2 RRAM: Experimental characterization and Monte Carlo simulation. (November 2021)

• Record Type: Journal Article
• Authors: Huang, Yifu; Wu, Xiaohan; Gu, Yuqian; Ge, Ruijing; Akinwande, Deji; Lee, Jack C.
• Is Part Of: Microelectronics and reliability. Volume 126(2021)
• Publication Date: 2021-11
• Subjects: Molybdenum disulfide -- 2D material -- Non-volatile resistance switching -- Resistive random-access memory -- Monte Carlo -- Electron beam irradiation; Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2021.114274
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: Two-dimensional (2D) monolayer molybdenum disulfide (MoS2 ) has been used as the non-volatile resistance switching (NVRS) layer in resistive random-access memory (RRAM) devices. In this work, an electron-beam irradiation treatment on monolayer MoS2 film to modify the defect properties has been applied to improve the reliability of the NVRS devices. Compared to unirradiated devices, the reliability of the devices with a moderate radiation has been shown to improve by up to 1.5× for yield and 11× for average DC cycling endurance. To better understand the mechanism behind, Monte Carlo simulations have been performed based on our previously proposed conductive-point model with the metal ion substitution into sulfur vacancy. The simulation yield and cycle numbers show similar trends with the experimental data. Our results provide additional insights into defect engineering to precisely control the switching properties of 2D-based RRAM devices for a wide range of applications.