Long-term electrical stability of next generation LV Trench IGBT at Hitachi ABB Power Grids. (November 2021)

• Record Type: Journal Article
• Authors: Schneider, Nick; Buitrago, Elizabeth; Vitale, Wolfgang; De-Michielis, Luca
• Is Part Of: Microelectronics and reliability. Volume 126(2021)
• Publication Date: 2021-11
• Subjects: Trench IGBT -- Dynamic avalanche -- Trench oxide degradation -- Repetitive RBSOA -- Plasma flow control -- Trapped charge -- Hot carrier injection -- IGBT reliability; Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2021.114300
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: The new 1.2 kV trench IGBT developed at Hitachi ABB Power Grids features not only state-of-the-art protection of the active trench with dummy trenches and a deep p-well implant but also a novel plasma flow control. These features allow for full design freedom along the technology curve, while ensuring the long-term stability of the trench gate oxide. Devices with differently engineered plasma flow controls were stressed with repetitive turn-off pulses (RRBSOA) at elevated voltages and currents. This way, the influence of the plasma flow control feature on the lifetime stability of the IGBT (with different dynamic avalanche characteristics) can be assessed. Highlights: Working principle of novel plasma flow control feature outlined Influence of dynamic avalanche on IGBT trench degradation investigated Effectiveness of HAPG's trench protection verified in highly accelerated stress test Plasma flow control largely decouples dynamic avalanche from trench IGBT degradation