Cite
MLA Citation
Po-Chun Hsu et al.. “Defect Characterization in High‐Electron‐Mobility Transistors with Regrown p‐GaN Gate by Low‐Frequency Noise and Deep‐Level Transient Spectroscopy.” Physica status solidi, vol. 218, no. 23, 2021, p. n/a. http://access.bl.uk/ark:/81055/vdc_100146755021.0x000015