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HARVARD Citation
Hsu, P. et al. (2021). Defect Characterization in High‐Electron‐Mobility Transistors with Regrown p‐GaN Gate by Low‐Frequency Noise and Deep‐Level Transient Spectroscopy. Physica status solidi. 218 (23), p. n/a. [Online].
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Hsu, P. et al. (2021). Defect Characterization in High‐Electron‐Mobility Transistors with Regrown p‐GaN Gate by Low‐Frequency Noise and Deep‐Level Transient Spectroscopy. Physica status solidi. 218 (23), p. n/a. [Online].